Note : Your request will be directed to Polyfet RF Devices.
The LB401 from Polyfet RF Devices is a RF Transistor with Power 51 dBm, Power(W) 130 W, Power Gain (Gp) 14 dB, VSWR 10.0:1, Breakdown Voltage - Drain-Source 65 V. Tags: Flange. More details for LB401 can be seen below.
5 W GaN Power Transistor from DC to 6 GHz
200 W GaN Power Transistor from 2.7 to 2.9 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
460 W GaN Power Amplifier from 1805 to 1880 MHz
520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
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