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The LB421 from Polyfet RF Devices is a RF Transistor with Power 45 dBm, Power(W) 35 W, Power Gain (Gp) 13 dB, VSWR 10.0:1, Breakdown Voltage - Drain-Source 36 V. Tags: Flanged. More details for LB421 can be seen below.
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2 kW CW/Pulsed LDMOS Power Transistor from 1 to 400 MHz
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275 W GaN Asymmetrical Doherty HEMT from 1880 to 2025 MHz
347 W GaN Power Transistor from 2.3 to 2.5 GHz
275 W Asymmetrical Doherty GaN HEMT from 1805 to 1880 MHz
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