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The LB421 from Polyfet RF Devices is a RF Transistor with Power 45 dBm, Power(W) 35 W, Power Gain (Gp) 13 dB, VSWR 10.0:1, Breakdown Voltage - Drain-Source 36 V. Tags: Flanged. More details for LB421 can be seen below.
13.8 W Doherty GaN Power Transistor from 2.3 to 2.4 GHz for 5G Base Stations
400 W, GaN on SiC HEMT from DC to 2.9 GHz
410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
5 W Surface-Mount LDMOS FET from 900 to 2700 MHz
410 W GaN-on-SiC HEMT from 3600 to 3800 MHz
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