Note : Your request will be directed to Polyfet RF Devices.
The LB803 from Polyfet RF Devices is a RF Transistor with Power 49 dBm, Power(W) 80 W, Power Gain (Gp) 12 dB, VSWR 10.0:1, Breakdown Voltage - Drain-Source 65 V. Tags: Flange. More details for LB803 can be seen below.
5 W GaN Power Transistor from DC to 6 GHz
200 W GaN Power Transistor from 2.7 to 2.9 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
800 W RF LDMOS Transistor from 730 to 960 MHz
615 W Thermally Enhanced LDMOS FET from 730 to 960 MHz
520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
You can now find similar products from multiple companies on everything RF.
Copyright 2020 © everything RF All Rights Reseverd  |
Let us know what you need, we can help find products that meet your requirement.
Our team will get back to you shortly.
Our Newsletters keep you up to date with the RF & Microwave Industry.
Create an account on everything RF to get a range of benefits.
Login to everything RF to download datasheets, white papers and more content.
Content submitted here will be sent to our editorial team who will review and consider it for publication on the website. you will be emailed if this content is published on everything RF.
Please click on the button in the email to get access to this section.