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LK602

RF Transistor by Polyfet RF Devices
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The LK602 from Polyfet RF Devices is a RF Transistor with Frequency 1 MHz to 1.5 GHz, Power 43.01 dBm, Power(W) 20 W, Gain 10 dB, Power Gain (Gp) 10 dB. Tags: Flanged. More details for LK602 can be seen below.

Product Specifications

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Product Details

  • Part Number
    LK602
  • Manufacturer
    Polyfet RF Devices
  • Description
    LDMOS Push Pull Transistor from 1 to 1500 MHz

General Parameters

  • Transistor Type
    LDMOS View all
  • Technology
    Si View all
  • Application Industry
    Military, Broadcast, Cellular, Base Station
  • Application
    FM, MRI Systems
  • Frequency
    1 MHz to 1.5 GHz
  • Power
    43.01 dBm
  • Power(W)
    20 W
  • Gain
    10 dB
  • Power Gain (Gp)
    10 dB
  • Transconductance
    1 MOhms (Forward)
  • VSWR
    1.10:1
  • Supply Voltage
    28 V
  • Drain Gate Voltage
    70 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Drain-Source (Vdss)
    70 V
  • Voltage - Gate-Source (Vgs)
    0 to 20 V
  • Drain Efficiency
    0.35
  • Drain Current
    6.4 A
  • Drain Bias Current
    2 mA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    130 W
  • Feedback Capacitance
    1.6 pF
  • Input Capacitance
    32 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    26 pF
  • Thermal Resistance
    1.10 Degree C/W
  • Package Type
    Flanged View all
  • RoHS
    Yes
  • Grade
    Military View all
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Saturation Resistance: 0.60 Ohms

Technical Documents
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