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The LK702 from Polyfet RF Devices is a RF Transistor with Power 49 dBm, Power(W) 90 W, Power Gain (Gp) 13 dB, VSWR 10.0:1, Breakdown Voltage - Drain-Source 65 V. Tags: Flange. More details for LK702 can be seen below.
410 W GaN-on-SiC HEMT from 3600 to 3800 MHz
400 W GaN HEMT from 2.7 to 2.9 GHz for Pulsed Radar Systems
850 W LDMOS Doherty Power Transistor from 617 to 960 MHz
25 W LDMOS FET from 500 to 1400 MHz
5 W Surface-Mount LDMOS FET from 900 to 2700 MHz
6 W GaN Transistor Die from 10 MHz to 18 GHz
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
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