Note : Your request will be directed to Polyfet RF Devices.
The LQ601 from Polyfet RF Devices is a RF Transistor with Power 40 dBm, Power(W) 12 W, Power Gain (Gp) 10 dB, VSWR 10.0:1, Breakdown Voltage - Drain-Source 65 V. Tags: Flange. More details for LQ601 can be seen below.
18 GHz GaAs MESFET for Military and Commercial Applications
LDMOS Doherty MMIC from 3.4 to 3.8 GHz
5 W GaN Power Transistor from DC to 6 GHz
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
800 W RF LDMOS Transistor from 730 to 960 MHz
500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
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