Note : Your request will be directed to Polyfet RF Devices.
The LQ821 from Polyfet RF Devices is a RF Transistor with Power 43 dBm, Power(W) 20 W, Power Gain (Gp) 12 dB, VSWR 10.0:1, Breakdown Voltage - Drain-Source 36 V. Tags: Flange. More details for LQ821 can be seen below.
200 W GaN Power Transistor from 2.7 to 2.9 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
60 W GaN HEMT Operates up to 7 GHz
400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
6 W RF Power GaN HEMT in a Plastic Package
800 W RF LDMOS Transistor from 730 to 960 MHz
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