Note : Your request will be directed to Polyfet RF Devices.
The LR2401 from Polyfet RF Devices is a RF Transistor with Power 52 dBm, Power(W) 175 W, Power Gain (Gp) 16 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 70 V. Tags: Flange. More details for LR2401 can be seen below.
200 W GaN Power Transistor from 2.7 to 2.9 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
60 W GaN HEMT Operates up to 7 GHz
460 W GaN Power Amplifier from 1805 to 1880 MHz
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
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