LR2401 Image

LR2401

RF Transistor by Polyfet RF Devices (147 more products)

Note : Your request will be directed to Polyfet RF Devices.

The LR2401 from Polyfet RF Devices is a RF Transistor with Power 52 dBm, Power(W) 175 W, Power Gain (Gp) 16 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 70 V. Tags: Flange. More details for LR2401 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      LR2401
    • Manufacturer :
      Polyfet RF Devices
    • Description :
      175 W, Si LDMOS Power Transistor

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Broadcast
    • Power :
      52 dBm
    • Power(W) :
      175 W
    • Power Gain (Gp) :
      16 dB
    • Transconductance :
      7 MOhms
    • VSWR :
      20.0:1
    • Drain Gate Voltage :
      80 V
    • Breakdown Voltage - Drain-Source :
      70 V
    • Voltage - Drain-Source (Vdss) :
      28 V
    • Voltage - Gate-Source (Vgs) :
      20 V
    • Drain Efficiency :
      0.6
    • Drain Current :
      18 A
    • Drain Bias Current :
      1 mA
    • Quiescent Drain Current :
      0.80 A
    • Gate Leakage Current (Ig) :
      1 uA
    • Power Dissipation (Pdiss) :
      380 W
    • Feedback Capacitance :
      1.8 pF
    • Input Capacitance :
      110 pF
    • Junction Temperature (Tj) :
      200 Degree C
    • Output Capacitance :
      40 pF
    • Thermal Resistance :
      0.48 Degree C/W
    • Package Type :
      Flange
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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