LR2501 Image

LR2501

RF Transistor by Polyfet RF Devices

Note : Your request will be directed to Polyfet RF Devices.

The LR2501 from Polyfet RF Devices is a RF Transistor with Power 53 dBm, Power(W) 200 W, Power Gain (Gp) 16 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 70 V. Tags: Flange. More details for LR2501 can be seen below.

Product Specifications

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Product Details

  • Part Number
    LR2501
  • Manufacturer
    Polyfet RF Devices
  • Description
    200 W, Si LDMOS Power Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast
  • Power
    53 dBm
  • Power(W)
    200 W
  • Power Gain (Gp)
    16 dB
  • Transconductance
    7.5 MOhms
  • VSWR
    20.0:1
  • Drain Gate Voltage
    80 V
  • Breakdown Voltage - Drain-Source
    70 V
  • Voltage - Drain-Source (Vdss)
    28 V
  • Voltage - Gate-Source (Vgs)
    10 V
  • Drain Efficiency
    0.6
  • Drain Current
    18 A
  • Drain Bias Current
    2 mA
  • Quiescent Drain Current
    0.80 A
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    420 W
  • Feedback Capacitance
    2.6 pF
  • Input Capacitance
    122 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    45 pF
  • Thermal Resistance
    0.40 Degree C/W
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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