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LX401

RF Transistor by Polyfet RF Devices (147 more products)

Note : Your request will be directed to Polyfet RF Devices.

The LX401 from Polyfet RF Devices is a RF Transistor with Power 47 dBm, Power(W) 60 W, Power Gain (Gp) 10 dB, VSWR 10.0:1, Breakdown Voltage - Drain-Source 65 V. Tags: Flange. More details for LX401 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      LX401
    • Manufacturer :
      Polyfet RF Devices
    • Description :
      60 W, Si LDMOS Power Transistor

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Aerospace & Defence, Broadcast
    • Application :
      Radio, Cellular, Base Stations, MRI
    • Power :
      47 dBm
    • Power(W) :
      60 W
    • Power Gain (Gp) :
      10 dB
    • Transconductance :
      2.7 MOhms
    • VSWR :
      10.0:1
    • Drain Gate Voltage :
      70 V
    • Breakdown Voltage - Drain-Source :
      65 V
    • Voltage - Drain-Source (Vdss) :
      28 V
    • Voltage - Gate-Source (Vgs) :
      20 V
    • Drain Efficiency :
      0.55
    • Drain Current :
      7 A
    • Drain Bias Current :
      1 mA
    • Quiescent Drain Current :
      0.20 A
    • Gate Leakage Current (Ig) :
      1 uA
    • Power Dissipation (Pdiss) :
      120 W
    • Feedback Capacitance :
      4 pF
    • Input Capacitance :
      80 pF
    • Junction Temperature (Tj) :
      200 Degree C
    • Output Capacitance :
      50 pF
    • Thermal Resistance :
      1.30 Degree C/W
    • Package Type :
      Flange
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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