Note : Your request will be directed to Polyfet RF Devices.
The LX521 from Polyfet RF Devices is a RF Transistor with Power 46 dBm, Power(W) 45 W, Power Gain (Gp) 10 dB, VSWR 10.0:1, Breakdown Voltage - Drain-Source 36 V. Tags: Flange. More details for LX521 can be seen below.
18 GHz GaAs MESFET for Military and Commercial Applications
LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.4 to 3.8 GHz
5 W GaN Power Transistor from DC to 6 GHz
6 W RF Power GaN HEMT in a Plastic Package
500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
800 W RF LDMOS Transistor from 730 to 960 MHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
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