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The LY942 from Polyfet RF Devices is a RF Transistor with Power 57 dBm, Power(W) 600 W, Power Gain (Gp) 19 dB, VSWR 13.0:1, Breakdown Voltage - Drain-Source 110 V. Tags: Flanged. More details for LY942 can be seen below.
150 W Linear/Pulsed GaN HEMT from DC to 3.2 GHz
125 W GaN Power Transistor from 1 to 2700 MHz
2-Stage Asymmetrical Doherty LDMOS FET from 2.3 to 2.7 GHz
Rectangular to Rectangular Waveguide Transitions from 2.1 to 50 GHz
Real-time Spectrum Monitoring and Geolocation Software
Triple Stub Tuners from 0.2 to 18.0 GHz for Broadband Applications
Right-Angle Waveguide-to-Coaxial Adapters from 1 to 110 GHz
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