SC222 Image

SC222

RF Transistor by Polyfet RF Devices

Note : Your request will be directed to Polyfet RF Devices.

The SC222 from Polyfet RF Devices is a RF Transistor with Power 36 dBm, Power(W) 4 W, Power Gain (Gp) 10 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 40 V. Tags: Flange. More details for SC222 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SC222
  • Manufacturer
    Polyfet RF Devices
  • Description
    4 W, Si VDMOS Power Transistor

General Parameters

  • Transistor Type
    VDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Broadcast
  • Application
    Radio, Cellular, Base Stations, MRI
  • Power
    36 dBm
  • Power(W)
    4 W
  • Power Gain (Gp)
    10 dB
  • Transconductance
    0.6 MOhms
  • VSWR
    20.0:1
  • Drain Gate Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    40 V
  • Voltage - Drain-Source (Vdss)
    12.5 V
  • Voltage - Gate-Source (Vgs)
    30 V
  • Drain Efficiency
    0.5
  • Drain Current
    1.6 A
  • Drain Bias Current
    0.4 mA
  • Quiescent Drain Current
    0.4 A
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    15 W
  • Feedback Capacitance
    1 pF
  • Input Capacitance
    18 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    16 pF
  • Thermal Resistance
    7 Degree C/W
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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