Note : Your request will be directed to Polyfet RF Devices.
The SH703 from Polyfet RF Devices is a RF Transistor with Power 51 dBm, Power(W) 130 W, Power Gain (Gp) 10 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 65 V. Tags: Flange. More details for SH703 can be seen below.
200 W GaN Power Transistor from 2.7 to 2.9 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
60 W GaN HEMT Operates up to 7 GHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
460 W GaN Power Amplifier from 1805 to 1880 MHz
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
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