Note : Your request will be directed to Polyfet RF Devices.
The SM705 from Polyfet RF Devices is a RF Transistor with Power 51 dBm, Power(W) 150 W, Power Gain (Gp) 13 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 65 V. Tags: Flange. More details for SM705 can be seen below.
18 GHz GaAs MESFET for Military and Commercial Applications
LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.4 to 3.8 GHz
5 W GaN Power Transistor from DC to 6 GHz
520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
6 W RF Power GaN HEMT in a Plastic Package
460 W GaN Power Amplifier from 1805 to 1880 MHz
615 W Thermally Enhanced LDMOS FET from 730 to 960 MHz
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