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The SP722 from Polyfet RF Devices is a RF Transistor with Power 43 dBm, Power(W) 20 W, Power Gain (Gp) 10 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 36 V. Tags: Flange. More details for SP722 can be seen below.
450 W GaN-on-SiC HEMT from 758 to 960 MHz
700 W GaN HEMT from 0.9 to 1.4 GHz for Avionics Application
10 W Surface-Mount GaN HEMT from DC to 8 GHz
25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
500 W GaN-on-SiC HEMT from 2515 to 2675 MHz
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
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