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The ST744 from Polyfet RF Devices is a RF Transistor with Power 50 dBm, Power(W) 100 W, Power Gain (Gp) 16 dB, VSWR 5.00:1, Breakdown Voltage - Drain-Source 125 V. Tags: Flanged. More details for ST744 can be seen below.
13.8 W Doherty GaN Power Transistor from 2.3 to 2.4 GHz for 5G Base Stations
400 W, GaN on SiC HEMT from DC to 2.9 GHz
410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
25 W LDMOS FET from 500 to 1400 MHz
5 W Surface-Mount LDMOS FET from 900 to 2700 MHz
25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
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