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The ST744 from Polyfet RF Devices is a RF Transistor with Power 50 dBm, Power(W) 100 W, Power Gain (Gp) 16 dB, VSWR 5.00:1, Breakdown Voltage - Drain-Source 125 V. Tags: Flanged. More details for ST744 can be seen below.
150 W GaN-on-SiC Power Transistor from 3.3 to 3.8 GHz
Gan Wideband Doherty Power Transistor from 3.3 to 3.7 GHz
300 W High-Efficiency GaN Amplifier from 2.4 to 2.5 GHz
275 W GaN Asymmetrical Doherty HEMT from 1880 to 2025 MHz
200 W Asymmetrical Doherty GaN HEMT from 2520 to 2630 MHz
347 W GaN Power Transistor from 2.3 to 2.5 GHz
100 W GaN-on-SiC Transistor from 2400 to 2500 MHz
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