QPD0007

RF Transistor by Qorvo (99 more products)

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The QPD0007 from Qorvo is a single-path, discrete GaN Transistor that operates from DC to 5 GHz. It is a single-staged transistor provides a saturated output power of 43 dBm and has an efficiency of up to 73%. This RoHS-compliant transistor requires a DC voltage of 48 V and consumes 32.5 mA of current. It is manufactured on a GaN on SiC HEMT process and is available in a DFN package that measures 4.5 x 4.0 mm. The transistor can be used in WCDMA/LTE, macrocell/microcell base stations, small cells, active antennas, 5G massive MIMO and general purpose applications.

Product Specifications

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Product Details

  • Part Number
    QPD0007
  • Manufacturer
    Qorvo
  • Description
    20 W GaN on SiC HEMT from DC to 5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Cellular
  • Application
    5G Massive MIMO, W-CDMA / LTE, Microcell Base Station, Small Cell, Active Antenna
  • Frequency
    DC to 5 GHz
  • Saturated Power
    43 dBm
  • Gain
    19 dB
  • Supply Voltage
    48 V (Drain)
  • Drain Efficiency
    73 Percent
  • Drain Current
    32.5 mA
  • Lead Free
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Dimension
    4.5 x 4.0 mm
  • RoHS
    Yes
  • Grade
    Commercial, Space Qualified