The QPD0007 from Qorvo is a single-path, discrete GaN Transistor that operates from DC to 5 GHz. It is a single-staged transistor provides a saturated output power of 43 dBm and has an efficiency of up to 73%. This RoHS-compliant transistor requires a DC voltage of 48 V and consumes 32.5 mA of current. It is manufactured on a GaN on SiC HEMT process and is available in a DFN package that measures 4.5 x 4.0 mm. The transistor can be used in WCDMA/LTE, macrocell/microcell base stations, small cells, active antennas, 5G massive MIMO and general purpose applications.