QPD1004

RF Transistor by Qorvo (96 more products)

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The Qorvo QPD1004 is a 25 W (P3dB), 50 Ohm input matched discrete GaN on SiC HEMT which operates from 30 to 1200 MHz on a 50 V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. This Gan Transistor has been developed for Tactical and Public Safety Radios. It is available in an industry-standard 6 x 5 mm surface mount DFN package.

Product Specifications

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Product Details

  • Part Number
    QPD1004
  • Manufacturer
    Qorvo
  • Description
    30 to 1200 MHz, 25 Watt, GaN RF Input-Matched Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Radar, Test & Measurement
  • Application
    Military, Mobile Radio, Communication, Test Instrumentation, Jammers
  • CW/Pulse
    Pulse
  • Frequency
    30 MHz to 1.2 GHz
  • Power
    43.98 dBm
  • Power(W)
    25 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    20.8 dB
  • Supply Voltage
    50 to 55 V
  • Voltage - Gate-Source (Vgs)
    -2.8 V
  • Drain Bias Current
    50 mA
  • Quiescent Drain Current
    50 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Surface Mount
  • Package
    6 x 5 mm
  • RoHS
    Yes

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