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QPD1008

RF Transistor by Qorvo (92 more products)

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The QPD1008 from Qorvo is a RF Transistor with Frequency DC to 3.2 GHz, Power 50.97 dBm, Power(W) 125.03 W, Saturated Power 52 dBm, Duty_Cycle 0.1. More details for QPD1008 can be seen below.

Product Specifications

  • Part Number
    QPD1008
  • Manufacturer
    Qorvo
  • Description
    DC to 3.2 GHz, 51 dBm Gan Transistor
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement
  • Application
    Military, Mobile Radio, Communication, Test Instrumentation, Jammers, Avionics
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.2 GHz
  • Power
    50.97 dBm
  • Power(W)
    125.03 W
  • Saturated Power
    52 dBm
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Gain
    17.5 dB
  • Supply Voltage
    12 to 55 V
  • Voltage - Gate-Source (Vgs)
    -2.8 V
  • Drain Bias Current
    260 mA
  • Quiescent Drain Current
    260 mA
  • Package Type
    Surface Mount
  • RoHS
    Yes
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