QPD2730

RF Transistor by Qorvo (92 more products)

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The QPD2730 from Qorvo is an asymmetric doherty power transistor that operates from 2.575 to 2.635 GHz. It delivers a peak doherty power of 223 Watts, an average power of 36 Watts with a gain of 15.9 dB and drain efficiency of 53%. The transistor is available in a 4-lead, earless, ceramic flange N1780 package and is suitable for a wide variety of applications including W-CDMA/LTE, Macrocell Base Station and Active antenna.

Product Specifications

  • Part Number
    QPD2730
  • Manufacturer
    Qorvo
  • Description
    220 Watt Doherty Transistor from 2.5 to 2.6 GHz
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    Macro Cells, Base Station, WCDMA, LTE
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.575 to 2.635 GHz
  • Power
    46.59 dBm
  • Power(W)
    45.6 W
  • Peak Output Power
    234.4 W
  • Saturated Power
    53.5 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    16 dB
  • Supply Voltage
    48 V
  • Voltage - Gate-Source (Vgs)
    -2.7 V
  • Drain Efficiency
    0.547
  • Quiescent Drain Current
    210 mA
  • Package Type
    Flange
  • Package
    Ceramic
  • RoHS
    Yes
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