QPD2730 Image


RF Transistor by Qorvo (85 more products)

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The QPD2730 from Qorvo is an asymmetric doherty power transistor that operates from 2.575 to 2.635 GHz. It delivers a peak doherty power of 223 Watts, an average power of 36 Watts with a gain of 15.9 dB and drain efficiency of 53%. The transistor is available in a 4-lead, earless, ceramic flange N1780 package and is suitable for a wide variety of applications including W-CDMA/LTE, Macrocell Base Station and Active antenna.

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    220 Watt Doherty Transistor from 2.5 to 2.6 GHz
  • Transistor Type
  • Application
  • Application Type
    Base Stations
  • Grade
    Military, Commercial
  • Frequency
    2575 to 2635 MHz
  • Gain
    15.9 dB
  • Power
    48.94 to 54.09 dBm
  • Supply Voltage
    48 V
  • Base Current (Ib)
    210 mA
  • Power Added Effeciency
  • Saturated Power
    53.5 dBm
  • Storage Temperature
    -65 to 150 Degree C
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