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QPD3800

RF Transistor by Qorvo (96 more products)

Note : Your request will be directed to Qorvo.

The QPD3800 from Qorvo is a RF Transistor with Frequency 3.4 to 3.8 GHz, Power 49.29 dBm, Power(W) 84.92 W, Saturated Power 49.3 dBm, Duty_Cycle 0.1. Tags: Flange. More details for QPD3800 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      QPD3800
    • Manufacturer :
      Qorvo
    • Description :
      3.4 to 3.8 GHz, HEMT Transistor

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure
    • Application :
      Macro Cells, Base Station, WCDMA, LTE
    • CW/Pulse :
      Pulse
    • Frequency :
      3.4 to 3.8 GHz
    • Power :
      49.29 dBm
    • Power(W) :
      84.92 W
    • Saturated Power :
      49.3 dBm
    • Pulsed Width :
      100 us
    • Duty_Cycle :
      0.1
    • Gain :
      21 dB
    • Supply Voltage :
      48 V
    • Voltage - Gate-Source (Vgs) :
      -2.7 V
    • Drain Efficiency :
      0.7
    • Quiescent Drain Current :
      180 mA
    • Package Type :
      Flange
    • Package :
      Ceramic
    • RoHS :
      Yes

    Technical Documents

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