RFG1M20180 Image

RFG1M20180

RF Transistor by Qorvo (93 more products)

Note : Your request will be directed to Qorvo.

The RFG1M20180 from Qorvo is a RF Transistor with Frequency 1.8 to 2.2 GHz, Power 45.5 dBm, Power(W) 35.48 W, Saturated Power 52.5 dBm, Gain 15 dB. Tags: Flange. More details for RFG1M20180 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      RFG1M20180
    • Manufacturer :
      Qorvo
    • Description :
      1.8 to 2.2 GHz, HEMT Transistor

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure
    • Application :
      Commercial, Radio, GPS
    • CW/Pulse :
      CW
    • Frequency :
      1.8 to 2.2 GHz
    • Power :
      45.5 dBm
    • Power(W) :
      35.48 W
    • Peak Output Power :
      180 W
    • Saturated Power :
      52.5 dBm
    • Gain :
      15 dB
    • Supply Voltage :
      28 to 48 V
    • Threshold Voltage :
      -3.7 V
    • Voltage - Gate-Source (Vgs) :
      -3.5 to -2.5 V
    • Drain Efficiency :
      0.31
    • Drain Bias Current :
      600 mA
    • Quiescent Drain Current :
      600 mA
    • Package Type :
      Flange
    • Package :
      Ceramic

    Technical Documents

Click to view more product details on manufacturer's website  »

Application Note

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