T1G2028536-FL Image

T1G2028536-FL

RF Transistor by Qorvo (88 more products)

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The T1G2028536-FL from Qorvo is a RF Transistor with Frequency DC to 2 GHz, Gain 19.4 to 20.8 dB, Power Gain (Gp) 16.4 to 17.8 dB, Power 54.3 to 55 dBm, Breakdown Voltage - Drain-Source 145 V. More details for T1G2028536-FL can be seen below.

Product Specifications

  • Part Number
    T1G2028536-FL
  • Manufacturer
    Qorvo
  • Description
    285 W, 36 V, DC to 2 GHz, Flanged Mount, GaN RF Power Transistor
  • Transistor Type
  • Application Type
    Radar
  • Grade
    Military
  • Frequency
    DC to 2 GHz
  • Gain
    19.4 to 20.8 dB
  • Power Gain (Gp)
    16.4 to 17.8 dB
  • Power
    54.3 to 55 dBm
  • Breakdown Voltage - Drain-Source
    145 V
  • Drain Efficiency
    56.3% to 66.7%
  • Drain Current
    1.33 A
  • Power Added Effeciency
    55.1% to 65.6%
  • Technology
    GaN, SiC-HEMT
  • Power Dissipation (Pdiss)
    226 W(CW), 288 W(Pulse)
  • Voltage - Drain-Source (Vdss)
    36 V
  • Voltage - Gate-Source (Vgs)
    -3 V
  • Package
    Flanged
  • Storage Temperature
    -40 to 150 Degree
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