T1G4020036-FL

RF Transistor by Qorvo (92 more products)

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The T1G4020036-FL from Qorvo is a RF Transistor with Frequency DC to 3.5 GHz, Power 46.81 dBm, Power(W) 47.97 W, Saturated Power 50.8 dBm, Duty_Cycle 0.2. More details for T1G4020036-FL can be seen below.

Product Specifications

  • Part Number
    T1G4020036-FL
  • Manufacturer
    Qorvo
  • Description
    DC to 3.3 GHz, 200 W Transistor
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement
  • Application
    Military, Communication, Jammers, Test Instrumentation, Radio, GPS
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.5 GHz
  • Power
    46.81 dBm
  • Power(W)
    47.97 W
  • Peak Output Power
    240 W
  • Saturated Power
    50.8 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    16 dB
  • Supply Voltage
    36 V
  • Voltage - Gate-Source (Vgs)
    -2.9 V
  • Drain Efficiency
    0.52
  • Quiescent Drain Current
    520 mA
  • Package Type
    Flange
  • RoHS
    Yes
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