T1G6001032-SM

RF Transistor by Qorvo (92 more products)

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The T1G6001032-SM from Qorvo is a RF Transistor with Frequency DC to 6 GHz, Power 40 dBm, Power(W) 10 W, Saturated Power 40 dBm, Duty_Cycle 0.2. More details for T1G6001032-SM can be seen below.

Product Specifications

  • Part Number
    T1G6001032-SM
  • Manufacturer
    Qorvo
  • Description
    10 W, 32 V, DC - 6 GHz GaN RF Power Transistor
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement
  • Application
    Military, Communication, Jammers, Test Instrumentation, Radio, GPS
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 6 GHz
  • Power
    40 dBm
  • Power(W)
    10 W
  • Peak Output Power
    10 W
  • Saturated Power
    40 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    19 dB
  • Supply Voltage
    32 V
  • Voltage - Gate-Source (Vgs)
    -2.9 V
  • Drain Efficiency
    0.55
  • Quiescent Drain Current
    50 mA
  • Package Type
    Surface Mount
  • Package
    5 x 5 mm
  • RoHS
    Yes
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