T2G4005528-FS

RF Transistor by Qorvo (92 more products)

Note : Your Quotation Request will be directed to Qorvo.

The T2G4005528-FS from TriQuint is a discrete GaN on SiC HEMT that operates from DC to 3.5 GHz. It provides an output power (P3dB) of 55 W at 3.5 GHz with a gain of up to 16.8 dB and a PAE of 56.7 %. It requires a supply of 28 V and draws 200 mA of current. The amplifier is available in lead-free NI-360 package and is RoHS compliant. It can be used in military radar, civilian radar, test instrumentation and professional & military radio communications applications.

Product Specifications

    Product Details

    • Part Number :
      T2G4005528-FS
    • Manufacturer :
      Qorvo
    • Description :
      55 Watt, GaN Power Transistor from DC to 3.5 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement
    • Application :
      Military, Communication, Jammers, Test Instrumentation, Radio, GPS
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      DC to 3.5 GHz
    • Power :
      47.4 dBm
    • Power(W) :
      54.95 W
    • Saturated Power :
      47.2 dBm
    • Pulsed Width :
      100 us
    • Duty_Cycle :
      0.2
    • Gain :
      16 dB
    • Supply Voltage :
      28 V
    • Voltage - Gate-Source (Vgs) :
      -2.95 V
    • Drain Efficiency :
      0.52
    • Quiescent Drain Current :
      200 mA
    • Package Type :
      Flange
    • RoHS :
      Yes

    Technical Documents

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