T2G4005528-FS

RF Transistor by Qorvo (98 more products)

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The T2G4005528-FS from TriQuint is a discrete GaN on SiC HEMT that operates from DC to 3.5 GHz. It provides an output power (P3dB) of 55 W at 3.5 GHz with a gain of up to 16.8 dB and a PAE of 56.7 %. It requires a supply of 28 V and draws 200 mA of current. The amplifier is available in lead-free NI-360 package and is RoHS compliant. It can be used in military radar, civilian radar, test instrumentation and professional & military radio communications applications.

Product Specifications

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Product Details

  • Part Number
    T2G4005528-FS
  • Manufacturer
    Qorvo
  • Description
    55 Watt, GaN Power Transistor from DC to 3.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement
  • Application
    Military, Communication, Jammers, Test Instrumentation, Radio, GPS
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.5 GHz
  • Power
    47.4 dBm
  • Power(W)
    54.95 W
  • Saturated Power
    47.2 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    16 dB
  • Supply Voltage
    28 V
  • Voltage - Gate-Source (Vgs)
    -2.95 V
  • Drain Efficiency
    0.52
  • Quiescent Drain Current
    200 mA
  • Package Type
    Flange
  • RoHS
    Yes

Technical Documents

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