RF Transistor by Qorvo

Note : Your request will be directed to Qorvo.

The T2G6001528-SG from Triquint is a GaN RF power transistor that operates from DC to 6 GHz. It has been designed to optimize power and efficiency at high drain bias operating conditions. The transistor can provide up to 15 W of power with gain of 15.5 dB

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    DC to 6 GHz GaN RF Transistor with 15 Watts Power

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement
  • Application
    Military, Communication, Jammers, Test Instrumentation, Radio, GPS
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 6 GHz
  • Power
    41.76 dBm
  • Power(W)
    15 W
  • Saturated Power
    42 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
  • Gain
    15.5 dB
  • Supply Voltage
    28 V
  • Voltage - Gate-Source (Vgs)
    -3.2 V
  • Drain Efficiency
  • Quiescent Drain Current
    100 mA
  • Package Type
  • RoHS

Technical Documents

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