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The TGF2018 from TriQuint is a discrete 180-micron pHEMT transistor which operates from DC to 20 GHz. It is designed using Triquint & proven standard 0.25um power pHEMT production process. It provides a P1dB of 22 dBm, a gain of 14 dB, a 55% o
800 W LDMOS Power Transistor from 1 to 650 MHz
520 MHz, 6.5 W Silicon Power MOSFET for VHF/UHF Radio Applications
2500 W Pulsed LDMOS Power Transistor from 1 to 400 MHz
195 W Surface-Mount GaN Power Transistor from 1880 to 2025 MHz
347 W GaN Power Transistor from 2.3 to 2.5 GHz
28 W GaN Transistor from DC to 6 GHz for Open RAN Applications
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