TGF2023-01 Image

TGF2023-01

RF Transistor by Qorvo (86 more products)

Note : Your Quotation Request will be directed to Qorvo.

The TGF2023-01 from Triquint is a discrete power GaN on SiC HEMT which operates from DC to 18 GHz. It provides 38 dBm of saturated output power with a powergain of 18 dB and an efficiency of 66%. It is designed using TriQuint’s proven 0.25um GaN

Product Specifications

  • Part Number
    TGF2023-01
  • Manufacturer
    Qorvo
  • Description
    DC -18 GHz, 6 Watt, Discrete Power GaN on SiC HEMT
  • Transistor Type
  • Application Industry
    Aerospace, Military, Broadband Wireless
  • Features
    High Power
  • Frequency
    DC -18 GHz
  • Gain
    15 to 18 dB
  • Power Gain (Gp)
    7.1 to 18.4 dB
  • Power
    6.31 W, 38 dBm
  • P1dB
    6.31 W, 38 dBm
  • Supply Voltage
    28 to 40 V
  • Drain Current
    1.25 A
  • Power Added Effeciency
    42% to 60%
  • Technology
    GaN
  • Saturated Power
    36.1 to 38.1 dBm
  • Voltage - Drain-Source (Vdss)
    28 to 32 V
  • Voltage - Gate-Source (Vgs)
    -3.6 V
  • Package
    Die
  • Dimension
    0.82 x 0.66 x 0.10 mm
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