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The TGF2023-01 from Triquint is a discrete power GaN on SiC HEMT which operates from DC to 18 GHz. It provides 38 dBm of saturated output power with a powergain of 18 dB and an efficiency of 66%. It is designed using TriQuint’s proven 0.25um GaN
450 Watt, 50 Volt, 3.1 to 3.5 GHz, GaN RF IMFET
15 Watt, 50 Volt, DC to 4 GHz, GaN RF Transistor
15W, 300 MHz to 1.215 GHz, GaN RF Input-Matched Transistor
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