TGF2929-FL

RF Transistor by Qorvo (92 more products)

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The TGF2929-FL from Qorvo is a ceramic GaN on SiC HEMT Transistor that operates from DC to 3.5 GHz. It is ideal for military and civilian radars, radio communications, test instrumentation and jammer applications. Operating at 28 V it provides 107 W of power (P3dB) with a gain of more than 14 dB at 3.5 GHz.

Product Specifications

  • Part Number
    TGF2929-FL
  • Manufacturer
    Qorvo
  • Description
    100W, DC to 3.5 GHz, GaN RF Power Transistor
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement
  • Application
    Military, Communication, Jammers, Test Instrumentation, Radio
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.5 GHz
  • Power
    50.29 dBm
  • Power(W)
    106.91 W
  • Saturated Power
    50.3 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    14 dB
  • Supply Voltage
    28 V
  • Voltage - Gate-Source (Vgs)
    -2.9 V
  • Quiescent Drain Current
    260 mA
  • Package Type
    Flange
  • RoHS
    Yes
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