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TGF2929-FL

RF Transistor by Qorvo (86 more products)

Note : Your Quotation Request will be directed to Qorvo.

The TGF2929-FL from Qorvo is a ceramic GaN on SiC HEMT Transistor that operates from DC to 3.5 GHz. It is ideal for military and civilian radars, radio communications, test instrumentation and jammer applications. Operating at 28 V it provides 107 W of power (P3dB) with a gain of more than 14 dB at 3.5 GHz.

Product Specifications

  • Part Number
    TGF2929-FL
  • Manufacturer
    Qorvo
  • Description
    100W, DC to 3.5 GHz, GaN RF Power Transistor
  • Transistor Type
  • Application
    Radio
  • Application Type
    Military, Commercial, Test Instrumentation
  • Grade
    Military, Commercial
  • Frequency
    DC to 3.5 GHz
  • Gain
    21.2 dB(more than 14 dB at 3.5 GHz)
  • Power
    50 dBm
  • Supply Voltage
    28 V
  • Power Added Effeciency
    50%
  • Package
    Ceramic
  • Storage Temperature
    -40 to 150 Degrees C
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