TGF2933 Image

TGF2933

RF Transistor by Qorvo (86 more products)

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The TGF2933 from Qorvo is a discrete GaN on SiC HEMT that operates from DC to 25 GHz. It delivers an output power of 7.2 W with a gain of 15 dB and a power added efficiency of 57%. This transistor requires a supply voltage of 28 Volts and consumes 80 mA of current. It is available as a die measuring 0.83 x 0.55 x 0.10 mm and is ideal for aerospace, defence and broadband wireless applications.

Product Specifications

  • Part Number
    TGF2933
  • Manufacturer
    Qorvo
  • Description
    7.2 W GaN RF Transistor from DC to 25 GHz
  • Transistor Type
  • Application Type
    Aerospace, Defense, Wireless Communication
  • Grade
    Aerospace, Commercial
  • Frequency
    DC to 25 GHz
  • Gain
    15 dB
  • Noise Figure
    1.3 dB
  • Power
    38 dBm
  • Input Power
    30 dBm
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    60 V
  • Current
    80 mA
  • Drain Current
    2 A
  • Base Current (Ib)
    80 mA
  • Power Added Effeciency
    0.57
  • Power Dissipation (Pdiss)
    9.9 W
  • Saturated Power
    7 W
  • Voltage - Gate-Source (Vgs)
    -7 to 1.5 V
  • Package Type
    Die
  • Dimension
    0.83 x 0.55 x 0.10 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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