TGF2933

RF Transistor by Qorvo (98 more products)

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The TGF2933 from Qorvo is a discrete GaN on SiC HEMT that operates from DC to 25 GHz. It delivers an output power of 7.2 W with a gain of 15 dB and a power added efficiency of 57%. This transistor requires a supply voltage of 28 Volts and consumes 80 mA of current. It is available as a die measuring 0.83 x 0.55 x 0.10 mm and is ideal for aerospace, defence and broadband wireless applications.

Product Specifications

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Product Details

  • Part Number
    TGF2933
  • Manufacturer
    Qorvo
  • Description
    7.2 W GaN RF Transistor from DC to 25 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 25 GHz
  • Power
    38.45 dBm
  • Power(W)
    7 W
  • Saturated Power
    38.6 dBm
  • Gain
    15 dB
  • Supply Voltage
    12 to 29.5 V
  • Voltage - Gate-Source (Vgs)
    -2.8 V
  • Drain Bias Current
    40 to 160 mA
  • Quiescent Drain Current
    80 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Die
  • Package
    0.83 x 0.55 x 0.10 mm
  • Dimension
    0.833 x 0.551 x 0.100 mm
  • RoHS
    Yes

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