TGF2965-SM Image

TGF2965-SM

RF Transistor by Qorvo (86 more products)

Note : Your Quotation Request will be directed to Qorvo.

The TGF2965-SM from Triquint is a GaN on SiC HEMT transistor that operates from 0.03 GHz to 3 GHz. It provides up to 6 W of power with a linear gain of 18 dB and efficiency of 63 %. The HEMT power transistor requires a 32 V supply for operation and draws 25 mA of current. It is housed in an industry-standard 3 x 3 mm surface mount QFN package. It can be used in radar, communications system, telemetry, jammers communications system, wideband power amplifiers and test instrumentation applications.

Product Specifications

  • Part Number
    TGF2965-SM
  • Manufacturer
    Qorvo
  • Description
    5 Watt GaN HEMT from 0.03 GHz to 3 GHz
  • Transistor Type
  • Application
    Radio
  • Application Type
    Military, Radar, Test & Measurement
  • Grade
    Commercial, Military
  • Frequency
    30 MHz to 3.0 GHz
  • Gain
    18 dB
  • Power
    37.8 dBm(6 W)
  • Input Power
    30 dBm (1 W)
  • Supply Voltage
    32 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Drain Current
    0.6 A
  • Power Added Effeciency
    0.63
  • Technology
    GaN
  • Power Dissipation (Pdiss)
    7.5 W
  • Saturated Power
    37.8 dBm
  • Voltage - Drain-Source (Vdss)
    32 V
  • Voltage - Gate-Source (Vgs)
    -10 to 0 V
  • Package Type
    Surface Mount
  • Dimension
    3 x 3 mm
  • RoHS
    Yes
  • Storage Temperature
    -40 to 150 Degree C
  • Tags
    GaN Transistors IMS 2015
  • Note
    Gate Current:- -1.25 to 2.1 mA
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