The TGF2965-SM from Triquint is a GaN on SiC HEMT transistor that operates from 0.03 GHz to 3 GHz. It provides up to 6 W of power with a linear gain of 18 dB and efficiency of 63 %. The HEMT power transistor requires a 32 V supply for operation and draws 25 mA of current. It is housed in an industry-standard 3 x 3 mm surface mount QFN package. It can be used in radar, communications system, telemetry, jammers communications system, wideband power amplifiers and test instrumentation applications.