TGF2965-SM

RF Transistor by Qorvo (92 more products)

Note : Your Quotation Request will be directed to Qorvo.

The TGF2965-SM from Triquint is a GaN on SiC HEMT transistor that operates from 0.03 GHz to 3 GHz. It provides up to 6 W of power with a linear gain of 18 dB and efficiency of 63 %. The HEMT power transistor requires a 32 V supply for operation and draws 25 mA of current. It is housed in an industry-standard 3 x 3 mm surface mount QFN package. It can be used in radar, communications system, telemetry, jammers communications system, wideband power amplifiers and test instrumentation applications.

Product Specifications

  • Part Number
    TGF2965-SM
  • Manufacturer
    Qorvo
  • Description
    5 Watt GaN HEMT from 0.03 GHz to 3 GHz
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement
  • Application
    Military, Communication, Jammers, Test Instrumentation
  • CW/Pulse
    Pulse
  • Frequency
    30 MHz to 3 GHz
  • Power
    37.78 dBm
  • Power(W)
    6 W
  • Saturated Power
    37.8 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    18 dB
  • Supply Voltage
    32 V
  • Voltage - Gate-Source (Vgs)
    -2.7 V
  • Quiescent Drain Current
    25 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Surface Mount
  • Package
    3 x 3 mm
  • RoHS
    Yes
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.