TGF2979-SM

RF Transistor by Qorvo (92 more products)

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The TGF2979-SM from Qorvo is a GaN on SiC HEMT that operates from DC to 12 GHz. It provides an output power of 22 Watts with a linear gain of 11 dB and power added efficiency of 45% at 9.4 GHz. The device is developed on the TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. It is available in an industry-standard 3 x 4 mm surface mount QFN package and is ideal for military and commercial radar applications.

Product Specifications

  • Part Number
    TGF2979-SM
  • Manufacturer
    Qorvo
  • Description
    22 W GaN Transistor from DC to 12 GHz
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • Application
    Military, Commercial, Avionics
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 12 GHz
  • Power
    43.98 dBm
  • Power(W)
    25 W
  • Saturated Power
    43.4 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    11 dB
  • Supply Voltage
    32 V
  • Voltage - Gate-Source (Vgs)
    -2.7 V
  • Quiescent Drain Current
    150 mA
  • Package Type
    Surface Mount
  • Package
    4 x 3 mm
  • RoHS
    Yes
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