Note : Your request will be directed to Qorvo.
The TGF2979-SM from Qorvo is a GaN on SiC HEMT that operates from DC to 12 GHz. It provides an output power of 22 Watts with a linear gain of 11 dB and power added efficiency of 45% at 9.4 GHz. The device is developed on the TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. It is available in an industry-standard 3 x 4 mm surface mount QFN package and is ideal for military and commercial radar applications.
300 W RF Power GaN Transistor for Cooking Applications
5 W LDMOS Integrated Doherty MMIC from 859 to 960 MHz
130 W GaN HEMT from DC to 3 GHz
20 W GaN on SiC HEMT from DC to 5 GHz
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