TGF3015-SM

RF Transistor by Qorvo (92 more products)

Note : Your Quotation Request will be directed to Qorvo.

The TGF3015-SM from TriQuint is a discrete GaN on SiC HEMT that operates from 0.03 to 3 GHz. It provides an output power (P3dB) of 11 W at 2.4 GHz with a linear gain up to 17.1 dB and a PAE of 62.7 %. It requires a supply of 32 V and draws 50 mA of current. The transistor is available in lead-free package that measures 3 x 3 mm and is RoHS compliant. It can be used in military radar, civilian radar, test instrumentation and professional & military radio communications applications.

Product Specifications

  • Part Number
    TGF3015-SM
  • Manufacturer
    Qorvo
  • Description
    11 Watt, GaN Power Transistor from 0.03 GHz to 3 GHz
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement
  • Application
    Military, Communication, Jammers, Test Instrumentation, C Band, ISM Band
  • CW/Pulse
    Pulse, CW
  • Frequency
    30 MHz to 3 GHz
  • Power
    40 dBm
  • Power(W)
    10 W
  • Saturated Power
    40.4 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    17 dB
  • Supply Voltage
    32 V
  • Voltage - Gate-Source (Vgs)
    -2.7 V
  • Quiescent Drain Current
    50 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Surface Mount
  • Package
    3 x 3 mm
  • RoHS
    Yes
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