TGF3015-SM Image

TGF3015-SM

RF Transistor by Qorvo (88 more products)

Note : Your Quotation Request will be directed to Qorvo.

The TGF3015-SM from TriQuint is a discrete GaN on SiC HEMT that operates from 0.03 to 3 GHz. It provides an output power (P3dB) of 11 W at 2.4 GHz with a linear gain up to 17.1 dB and a PAE of 62.7 %. It requires a supply of 32 V and draws 50 mA of current. The transistor is available in lead-free package that measures 3 x 3 mm and is RoHS compliant. It can be used in military radar, civilian radar, test instrumentation and professional & military radio communications applications.

Product Specifications

  • Part Number
    TGF3015-SM
  • Manufacturer
    Qorvo
  • Description
    11 Watt, GaN Power Transistor from 0.03 GHz to 3 GHz
  • Transistor Type
  • Application
    Radio
  • Application Type
    Military, Radar, Test & Measurement
  • Grade
    Commercial, Military
  • Frequency
    30 MHz to 3.0 GHz
  • Gain
    17.1 dB
  • Power
    40.2 dBm(16.5 W)
  • Input Power
    27.5 dBm(0.5 W)
  • Supply Voltage
    32 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Drain Current
    1.5 A
  • Power Added Effeciency
    0.627
  • Technology
    GaN
  • Power Dissipation (Pdiss)
    15 W
  • Saturated Power
    40.2 dBm
  • Voltage - Drain-Source (Vdss)
    32 V
  • Voltage - Gate-Source (Vgs)
    -50 to 0 V
  • Package Type
    Surface Mount
  • Dimension
    3 x 3 mm
  • RoHS
    Yes
  • Storage Temperature
    -40 to 150 Degree C
  • Tags
    GaN Transistors IMS 2015
  • Note
    Gate Current:- -2.5 to 4.2 mA
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