TGF3021-SM

RF Transistor by Qorvo

Note : Your request will be directed to Qorvo.

The TGF3021-SM from Triquint is a GaN on SiC HEMT transistor that operates from 30 MHz to 4 GHz. It provides up to 30 W of power with a gain of 19.3 dB and efficiency of 72.7 %. The HEMT power transistor requires a 32 V supply for operation and draws 65 mA of current. It is housed in an industry-standard 3 x 4 mm surface mount QFN package. It can be used in military radars, civilian radars, jammers, land mobile radio communications, wideband and narrowband amplifiers and test instrumentation applications.

Product Specifications

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Product Details

  • Part Number
    TGF3021-SM
  • Manufacturer
    Qorvo
  • Description
    30 Watt GaN HEMT from 30 MHz to 4 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement
  • Application
    Military, Communication, Jammers, Test Instrumentation
  • CW/Pulse
    Pulse, CW
  • Frequency
    30 MHz to 4 GHz
  • Power
    44.77 dBm
  • Power(W)
    29.99 W
  • Saturated Power
    45 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    19 dB
  • Supply Voltage
    32 V
  • Voltage - Gate-Source (Vgs)
    -2.7 V
  • Quiescent Drain Current
    65 mA
  • Package Type
    Surface Mount
  • Package
    4 x 3 mm
  • RoHS
    Yes

Technical Documents

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