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ID38461DR Image

The ID38461DR from RFHIC is a High-Electron-Mobility Transistor (HEMT) that operates from 3700 to 3980 MHz. It delivers an output power of 56 W with a gain of 14.5 dB and has an efficiency of 45%. This transistor is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process. It requires a 48V DC voltage. The transistor is available in a surface-mount package and can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems. It can also be used for multi-band, multi-mode, multi-carrier, high-efficiency, and Doherty amplifier applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    56 W GaN-on-SiC HEMT from 3700 to 3980 MHz

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    WiMax, GSM, Amplifiers, 3G / WCDMA, Base Station
  • Frequency
    3.7 to 3.98 GHz
  • Power
    47.5 dBm
  • Power(W)
    56.2 W
  • Saturated Power
    447 W
  • Gain
    14.5 dB
  • Efficiency
    45 %
  • Supply Voltage
    48 V
  • Package Type
  • RoHS
  • Grade
  • Note
    Spurious: -23.8 dBc