The ID38461DR from RFHIC is a High-Electron-Mobility Transistor (HEMT) that operates from 3700 to 3980 MHz. It delivers an output power of 56 W with a gain of 14.5 dB and has an efficiency of 45%. This transistor is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process. It requires a 48V DC voltage. The transistor is available in a surface-mount package and can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems. It can also be used for multi-band, multi-mode, multi-carrier, high-efficiency, and Doherty amplifier applications.