ID41411DR

RF Transistor by RFHIC | Visit website (45 more products)

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The ID41411DR from RFHIC is a Doherty GaN-on-SiC HEMT that operates from 3700 to 4100 MHz. It delivers an output power of up to 410 W with a gain of 14.2 dB and an efficiency of 46.1%. This asymmetrical HEMT has spurious levels of -26.1 dBc and is ideal for use in 4G LTE, 5G NR systems, multi-band, multi-mode, and high-efficiency Doherty amplifier applications.

Product Specifications

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Product Details

  • Part Number
    ID41411DR
  • Manufacturer
    RFHIC
  • Description
    410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular
  • Application
    4G, 5G
  • Frequency
    3.7 to 4.1 GHz
  • Power
    52.2 dBm
  • Power(W)
    410 W
  • Gain
    14.2 dB
  • Efficiency
    46.1 %
  • Supply Voltage
    48 V
  • Lead Free
    Yes
  • RoHS
    Yes
  • Grade
    Commercial
  • Note
    Spurious: -26.1 dBc

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