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IE05600DC

RF Transistor by RFHIC | Visit website (59 more products)

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The IE05600DC from RFHIC is a GaN Power Transistor that operates from 499 to 501 MHz. It provides over 580 Watts of CW power with a gain of 19.3 dB and an efficiency of 75 % (@50 V). This device is suitable for use in CW, pulse and linear applications. It is available in a surface mount package that measures 9.28 x 20.6 x 3.6 mm and is designed to replace industrial magnetrons and other vacuum tubes that are currently used in a particle accelerator, Linear accelerator, free-electron laser, and medical systems.

Product Specifications

    Product Details

    • Part Number :
      IE05600DC
    • Manufacturer :
      RFHIC
    • Description :
      580 W GaN Power Transistor from 499 to 501 MHz

    General Parameters

    • Technology :
      GaN on SiC
    • Application Industry :
      ISM, RF Energy
    • Application :
      pulsed applications, RF energy
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      499 to 501 MHz
    • Power :
      57.77 to 57.85 dBm
    • Power(W) :
      598 to 609 W
    • Saturated Power :
      580 W
    • Power Gain (Gp) :
      19.1 to 19.3 dB
    • Supply Voltage :
      50 to 52 V
    • Voltage - Drain-Source (Vdss) :
      150 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      75 %
    • Drain Current :
      18 A
    • Power Dissipation (Pdiss) :
      165 W
    • Package Type :
      Flanged
    • Dimension :
      9.28 x 20.6 x 3.6 mm
    • RoHS :
      Yes
    • Operating Temperature :
      -65 to 150 Degree C
    • Storage Temperature :
      -40 to 150 Degree C

    Technical Documents

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