IE09300PC Image

IE09300PC

RF Transistor by RFHIC (57 more products)

Note : Your request will be directed to RFHIC.

The IE09300PC is a GaN Power Transistor that operates from 910 to 920 MHz. It provides over 300 watts of CW power with a gain of 18 dB and efficiency of 80%. This rugged transistor has been developed to replace industrial magnetrons and other vacuum tubes that are currently used in industrial heating, drying, plasma lighting and medical system.

Product Specifications

    Product Details

    • Part Number :
      IE09300PC
    • Manufacturer :
      RFHIC
    • Description :
      300 Watt GaN Power Transistor from 910 to 920 MHz

    General Parameters

    • Technology :
      GaN on SiC
    • Application Industry :
      ISM
    • Application :
      Industrial Heating, Plasma Lighting
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      910 to 920 MHz
    • Power :
      55.9 dBm
    • Power(W) :
      330 W
    • Saturated Power :
      300 to 330 W
    • Gain :
      17.1 to 18 dB
    • Power Gain (Gp) :
      17.1 to 18 dB
    • Supply Voltage :
      50 V
    • Input Power :
      5.3 to 6.6 W
    • Breakdown Voltage - Drain-Source :
      150 V
    • Voltage - Drain-Source (Vdss) :
      150 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      77 to 80 %
    • Drain Current :
      18 mA
    • Drain Leakage Current (Id) :
      16.7 mA
    • Gate Leakage Current (Ig) :
      -9.2 mA
    • Power Dissipation (Pdiss) :
      165 W
    • Impedance Zs :
      50 Ohms
    • Junction Temperature (Tj) :
      225 Degrees C
    • Thermal Resistance :
      0.85 °C/W
    • Package Type :
      Surface Mount
    • Dimension :
      10.2x10.2x4.1 mm
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 150 Degrees C
    • Storage Temperature :
      -65 to 150 Degrees C

    Technical Documents

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