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IE101K1PM

RF Transistor by RFHIC | Visit website (60 more products)

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The IE101K1PM from RFHIC is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power(W) 1100 W, Duty_Cycle 2%, Power Gain (Gp) 18 dB, Supply Voltage 50 V. Tags: Flanged. More details for IE101K1PM can be seen below.

Product Specifications

    Product Details

    • Part Number :
      IE101K1PM
    • Manufacturer :
      RFHIC
    • Description :
      GaN Power Transistors from 1030 to 1090 MHz

    General Parameters

    • Technology :
      GaN on SiC
    • Application Industry :
      Radar, Aerospace & Defence
    • Application :
      Avionics System
    • CW/Pulse :
      Pulse
    • Frequency :
      1.03 to 1.09 GHz
    • Power(W) :
      1100 W
    • Duty_Cycle :
      2%
    • Power Gain (Gp) :
      18 dB
    • Supply Voltage :
      50 V
    • Voltage - Drain-Source (Vdss) :
      150 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      80%
    • Drain Current :
      18 A
    • Power Dissipation (Pdiss) :
      165 W
    • Impedance Zs :
      50 Ohms
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree
    • Note :
      Pulse Droop : 0.5 dB

    Technical Documents

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