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IE21056WD

RF Transistor by RFHIC | Visit website

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The IE21056WD from RFHIC is a RF Transistor with Frequency 2.11 to 2.17 GHz, Power(W) 55.98 W, Saturated Power 47.48 dBm, Gain 17.2 dB, Supply Voltage 48 V. Tags: Flanged. More details for IE21056WD can be seen below.

Product Specifications

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Product Details

  • Part Number
    IE21056WD
  • Manufacturer
    RFHIC
  • Description
    GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    WiMAX, LTE, WCDMA, GSM
  • CW/Pulse
    CW
  • Frequency
    2.11 to 2.17 GHz
  • Power(W)
    55.98 W
  • Saturated Power
    47.48 dBm
  • Gain
    17.2 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.548
  • Package Type
    Flanged
  • Package
    RF12001DKR3
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