IE21085P

RF Transistor by RFHIC | Visit website (51 more products)

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The IE21085P from RFHIC is a RF Transistor with Frequency 2.11 to 2.17 GHz, Power 49.29 dBm, Power(W) 84.92 W, Saturated Power 49.29 dBm, Gain 20.7 dB. Tags: Flanged. More details for IE21085P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IE21085P
  • Manufacturer
    RFHIC
  • Description
    GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    WiMAX, LTE, WCDMA, GSM
  • CW/Pulse
    CW
  • Frequency
    2.11 to 2.17 GHz
  • Power
    49.29 dBm
  • Power(W)
    84.92 W
  • Saturated Power
    49.29 dBm
  • Gain
    20.7 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.431
  • Package Type
    Flanged
  • Package
    NS-AS01

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