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IE23195WD

RF Transistor by RFHIC | Visit website (60 more products)

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The IE23195WD from RFHIC is a RF Transistor with Frequency 2.3 to 2.4 GHz, Power(W) 32 W, Gain 15.3 dB, Supply Voltage 48 V, Drain Efficiency 0.558. Tags: Flanged. More details for IE23195WD can be seen below.

Product Specifications

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Product Details

  • Part Number
    IE23195WD
  • Manufacturer
    RFHIC
  • Description
    GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    Base Station, WiMAX, LTE, WCDMA, GSM
  • CW/Pulse
    CW
  • Frequency
    2.3 to 2.4 GHz
  • Power(W)
    32 W
  • Gain
    15.3 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.558
  • Package Type
    Flanged
  • Package
    RF12001DKR3
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