IE24300P Image

IE24300P

RF Transistor by RFHIC (57 more products)

Note : Your request will be directed to RFHIC.

The IE24300P from RFHIC is a RF Transistor with Frequency 2.4 to 2.5 GHz, Power 54.94 to 55.56 dBm, Power(W) 312.1 to 360 W, Saturated Power 300 to 320 W, Gain 11.4 to 12.6 dB. Tags: Surface Mount. More details for IE24300P can be seen below.

Product Specifications

    Product Details

    • Part Number :
      IE24300P
    • Manufacturer :
      RFHIC
    • Description :
      GaN on SiC Transistor from 2.4 to 2.5 GHz

    General Parameters

    • Technology :
      GaN on SiC
    • Application Industry :
      ISM
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      2.4 to 2.5 GHz
    • Power :
      54.94 to 55.56 dBm
    • Power(W) :
      312.1 to 360 W
    • Saturated Power :
      300 to 320 W
    • Gain :
      11.4 to 12.6 dB
    • Power Gain (Gp) :
      11.4 to 12.6 dB
    • VSWR :
      5.00:1
    • Supply Voltage :
      52 Vdc
    • Input Power :
      19.7 to 22.5 W
    • Voltage - Drain-Source (Vdss) :
      150 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      66 to 70 %
    • Drain Current :
      18 mA
    • Drain Leakage Current (Id) :
      16.7 mA
    • Gate Leakage Current (Ig) :
      -9.2 mA
    • Power Dissipation (Pdiss) :
      165 W
    • Impedance Zs :
      50 Ohms
    • Junction Temperature (Tj) :
      225 Degrees C
    • Thermal Resistance :
      0.85 °C/W
    • Package Type :
      Surface Mount
    • Dimension :
      10.2x10.2x4.1 mm
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 150 Degrees C
    • Storage Temperature :
      -65 to 150 Degrees C

    Technical Documents

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