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IE27165PE

RF Transistor by RFHIC | Visit website (60 more products)

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The IE27165PE from RFHIC is a RF Transistor with Frequency 2.62 to 2.69 GHz, Power(W) 164.82 W, Saturated Power 52.17 dBm, Gain 16.9 dB, Supply Voltage 48 V. Tags: Flanged. More details for IE27165PE can be seen below.

Product Specifications

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Product Details

  • Part Number
    IE27165PE
  • Manufacturer
    RFHIC
  • Description
    GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    WiMAX, LTE, WCDMA, GSM
  • CW/Pulse
    CW
  • Frequency
    2.62 to 2.69 GHz
  • Power(W)
    164.82 W
  • Saturated Power
    52.17 dBm
  • Gain
    16.9 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.431
  • Package Type
    Flanged
  • Package
    NS-AS01
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