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RT12014P

RF Transistor by RFHIC | Visit website

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The RT12014P from RFHIC is a RF Transistor with Frequency DC to 6 GHz, Power(W) 14 W, Saturated Power 41.46 dBm, Gain 17.5 dB, Supply Voltage 48 V. Tags: Flanged. More details for RT12014P can be seen below.

Product Specifications

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Product Details

  • Part Number
    RT12014P
  • Manufacturer
    RFHIC
  • Description
    GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    WiMAX, LTE, WCDMA, GSM
  • CW/Pulse
    CW
  • Frequency
    DC to 6 GHz
  • Power(W)
    14 W
  • Saturated Power
    41.46 dBm
  • Gain
    17.5 dB
  • Supply Voltage
    48 V
  • Drain Efficiency
    0.352
  • Package Type
    Flanged
  • Package
    NS-CS01
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