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PD55008-E

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PD55008-E Image

The PD55008-E from STMicroelectronics is a RF Transistor with Frequency 480 to 900 MHz, Power 34.77 dBm, Power(W) 3 W, Power Gain (Gp) 15 to 17 dB, Efficiency 50 to 55%. Tags: Surface Mount. More details for PD55008-E can be seen below.

Product Specifications

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Product Details

  • Part Number
    PD55008-E
  • Manufacturer
    STMicroelectronics
  • Description
    3 W, LDMOS / MOSFET RF Transistor from 480 to 900 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast, Commercial, Wireless Infrastructure
  • Application
    Commercial, Industrial, Radio
  • CW/Pulse
    CW
  • Frequency
    480 to 900 MHz
  • Power
    34.77 dBm
  • Power(W)
    3 W
  • Power Gain (Gp)
    15 to 17 dB
  • Efficiency
    50 to 55%
  • VSWR
    20.00:1
  • Supply Voltage
    12.5 to 15.5 V
  • Voltage - Drain-Source (Vdss)
    40 V
  • Voltage - Gate-Source (Vgs)
    ±20 V
  • Current
    150 mA
  • Drain Current
    4 A
  • Drain Leakage Current (Id)
    1 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    52.8 W
  • Feedback Capacitance
    2.8 pF
  • Input Capacitance
    58 pF
  • Junction Temperature (Tj)
    165 Degree C
  • Output Capacitance
    38 pF
  • Thermal Resistance
    1.8 Degree C/W
  • Package Type
    Surface Mount
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series
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