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PD57018-E

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PD57018-E Image

The PD57018-E from STMicroelectronics is a RF Transistor with Frequency 925 to 960 MHz, Power 42.55 dBm, Power(W) 18 W, Power Gain (Gp) 14 to 16.5 dB, Efficiency 50 to 53%. Tags: Surface Mount. More details for PD57018-E can be seen below.

Product Specifications

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Product Details

  • Part Number
    PD57018-E
  • Manufacturer
    STMicroelectronics
  • Description
    18 W, LDMOS / MOSFET RF Transistor from 925 to 960 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast, Commercial, Wireless Infrastructure
  • Application
    Commercial, Industrial, Radio
  • CW/Pulse
    CW
  • Frequency
    925 to 960 MHz
  • Power
    42.55 dBm
  • Power(W)
    18 W
  • Power Gain (Gp)
    14 to 16.5 dB
  • Efficiency
    50 to 53%
  • VSWR
    10.00:1
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    ±20 V
  • Current
    100 mA
  • Drain Current
    2.5 A
  • Drain Leakage Current (Id)
    1 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    31.7 W
  • Feedback Capacitance
    1.3 pF
  • Input Capacitance
    34.5 pF
  • Junction Temperature (Tj)
    165 Degree C
  • On Resistance
    0.76 Ohms
  • Output Capacitance
    21 pF
  • Thermal Resistance
    3 Degree C/W
  • Package Type
    Surface Mount
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series
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