EGN21C020MK Image

EGN21C020MK

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The EGN21C020MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.14 GHz, Power 40.5 dBm, Power(W) 11.22 W, Saturated Power 42.5 to 43.5 dBm, Power Gain (Gp) 18 to 19 dB. Tags: Flanged. More details for EGN21C020MK can be seen below.

Product Specifications

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Product Details

  • Part Number
    EGN21C020MK
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    2.14 GHz, Gain GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    WCDMA, LTE, Base Station
  • Frequency
    2.14 GHz
  • Power
    40.5 dBm
  • Power(W)
    11.22 W
  • Saturated Power
    42.5 to 43.5 dBm
  • Power Gain (Gp)
    18 to 19 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Efficiency
    10.5 to 12.5%
  • Power Dissipation (Pdiss)
    32.1 W
  • Thermal Resistance
    6 to 7 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 46 mA, Reverse Gate Current : -0.7 mA

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